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mlx90251 programmable linear hall effect sensor 3901090251 page 1 of 20 data sheet rev 012 oct/2012 features and benefits analog signal processing quad switched hall plate chopper stabilized amplifier linear analog ratiometric output voltage programmable output quiescent voltage (v oq ) -100%v dd ?200%v dd range programmable magnetic sensitivity programmable low pass filter programmable clamping voltage programmable temperature compensation melexis id number programmable customer id number lead-free package application examples linear position sensing rotary position sensing current sensing magnetic field measurement ordering code product code temperature code package co de option code packing form code mlx90251 e va faa-000 bu mlx90251 e va faa-100 bu mlx90251 e va faa-200 bu mlx90251 e va faa-300 bu mlx90251 l va faa-000 bu mlx90251 l va faa-100 bu mlx90251 l va faa-200 bu mlx90251 l va faa-300 bu legend : temperature code: l for temperature range -40c to 150c e for temperature range -40c to 85c package code: va for plastic single in line thickn ess 1.1 -1.2mm option code: see section 10.4 packing form: bu for bulk ordering example: mlx90251lva-faa-000-bu
mlx90251 programmable linear hall effect sensor 3901090251 page 2 of 20 data sheet rev 012 oct/2012 1 functional diagram opa dac shift register e e p r o m opa opa 3 dac dac dac filter dac supply 1 4 program decoder 2 dac figure 1-1 functional diagram pin out va package v dd 1 test 2 v ss (ground) 3 v out 4 2 general description the mlx90251 is a cmos programmable, ratiometric linear hall effect sensor ic. the linear output voltage is proportional to the magnetic flux density. the ratiometric output voltage is proportional to the supply voltage. the mlx90251 possesses active error correction circuitry, which virtually eliminates the offset er rors normally associated with analog hall effect devices. all the parameters of the mlx90251 transfer characteristic are fully programmable. the v oq (v out @ b = 0 gauss), the sensitivity, the slope polarity, the output clamping levels, the thermal sensitivity drift, the internal bias point and a low-pass filter are all programmable in end-user applications. the mlx90251 has a very stable thermal compensation for both the sensitivity and the v oq over a broad temperature range. for traceability purpose the mlx90251 will carry a unique id number programmed by melexis and 24 bits of eeprom memory are allocated for a user programmed serial number. table 1: pin out
mlx90251 programmable linear hall effect sensor 3901090251 page 3 of 20 data sheet rev 012 oct/2012 table of contents 1 functional diagram .............................. ................................................... .......................... 2 2 general description ............................. ................................................... .......................... 2 3 glossary of terms ............................... ................................................... ........................... 4 4 maximum ratings ................................. ................................................... ......................... 4 5 detailed block diagram .......................... ................................................... ........................ 5 5.1 detailed description .......................... ................................................... ....................... 5 6 general electrical specifications ............... ................................................... ..................... 6 7 programming range ............................... ................................................... ....................... 7 8 timing specifications ........................... ................................................... .......................... 7 9 accuracy ........................................ ................................................... ................................ 7 10 programmable features .......................... ................................................... .................... 8 10.1 output quiescent voltage (v oq ) ................................................. ............................... 9 10.2 thermal v oq drift (drift) .................................... ................................................... . 9 10.3 sensitivity, rough gain and fine gain ........ ................................................... .......... 9 10.4 sensitivity range selection .................. ................................................... ................ 10 10.5 sensitivity polarity (invert)................. ................................................... ............... 12 10.6 clamping levels (clamplow, clamphigh) ........ ............................................... 12 10.7 filter (filter) .............................. ................................................... ....................... 13 10.8 sensitivity temperature compensation (tc, tcw, tc 2 ) ........................................ 13 10.9 diagnostic output level (faultlev) ........... ................................................... ....... 14 10.10 the eeprom, parity, and melexis crc ......... ................................................... .. 14 10.11 output amplifier configuration (mode) ....... ................................................... ...... 14 10.12 memory lock (memlock) ....................... ................................................... ......... 14 10.13 ic traceability ............................. ................................................... ........................ 15 11 performance graphs ............................. ................................................... ..................... 15 12 applications information ....................... ................................................... ...................... 16 12.1 application circuits ? va-package ............ ................................................... ........... 16 12.2 programming the sensor ....................... ................................................... .............. 16 12.3 calibration procedure ........................ ................................................... .................. 17 13 standard information regarding manufacturability of melexis products with different soldering processes ............................... ................................................... ......................... 18 14 esd precautions ................................ ................................................... ........................ 18 15 package information ............................ ................................................... ...................... 19 15.1 va package outline and hall plate position ... ................................................... ..... 19 16 disclaimer ..................................... ................................................... ............................. 20
mlx90251 programmable linear hall effect sensor 3901090251 page 4 of 20 data sheet rev 012 oct/2012 3 glossary of terms term explanation mt (milli-tesla) unit of measurement for magnetic f lux density. 1mt is equal to 10 gauss. v oq (output quiescent voltage) output voltage at zero magnetic field, v out for b = 0 mt. sensitivity change in output voltage versus change in magnetic field ( v out / b) tempco (sensitivity temperature compensation) change in sensitivity over temperature. listed in units of ppm / c (where 100ppm / c. = 0 .01% / c) ptc (programming through the connector) melexis in-circuit programming protocol. msb most significant bit. lsb least significant bit. 4 maximum ratings parameter units maximumsupplyvoltage,v dd_max (over voltage) 30v maximumsupplycurrent,i dd_max (overvoltage) 50ma reversevoltage,v dd_rev 15v reversesupplycurrent,i dd_rev 85ma positiveoutputvoltage,v out_max 24v positiveoutputcurrent,i out_pos_fault 40ma reverseoutputvoltage,v out_rev 0.7v reverseoutputcurrent,i out_rev_fault 50ma operatingambienttemperaturerange,t a 40cto150c storagetemperaturerange,t s 55cto165c magneticfluxdensity infinite table 2: absolute maximum ratings note: exceeding the absolute maximum ratings may ca use permanent damage. exposure to absolute- maximum-rated conditions for extended periods may a ffect device reliability.
mlx90251 programmable linear hall effect sensor 3901090251 page 5 of 20 data sheet rev 012 oct/2012 5 detailed block diagram figure 5-1 detailed block diagram 5.1 detailed description integrated on the mlx90251 is a temperature-compens ated quad switched hall plate, chopper stabilized amplifiers, adjustable output filter, output driver , voltage protection circuitry and a programmable e eprom with security and redundancy. programming the eep rom allows each device to be calibrated in the application. in normal operation data stored in the eeprom feeds a register, ram, that updates internal dacs and switches that effect the operation of the device. in programming mode the ram can be directly accesse d to allow faster calibration of the parameters. commun ication to the device is done using melexis' ptc se rial interface.
mlx90251 programmable linear hall effect sensor 3901090251 page 6 of 20 data sheet rev 012 oct/2012 6 general electrical specifications dc operating parameters at v dd = 5v (unless otherwise specified) and for t a as specified by the temperature range (e or l). parameter symbol test conditions min typical max units nominalsupplyvoltage v ddnom 5 v operatingsupplyvoltage v dd ? 4.5 5.5 v nominalsupplycurrent i ddnom v dd =v ddnom 4.0 7.0 8.0 ma supplycurrent i dd v dd =4.55.5v 3.0 9.0 ma outputvoltageswing v outpd pulldownload10k noclamping 2 96 %v dd v outpu pullupload10k noclamping 5 97 %v dd outputcurrent i out v dd =v ddnom 1.25 1.25 ma outputshortcircuitcurrent i outsc+ i outsc v dd =v ddnom outputshortedtosupplypermanent outputshortedtogroundpermanent 12 4 4 12 ma ma diagnosticoutputvoltage v out1 brokensupply, pulldownload>10k 0 0.5 %v dd %v dd %v dd %v dd v out2 brokenground, pulldownload>10k 94 96 100 v out3 brokensupply, pullupload>10k 0 3 5 v out4 brokenground, pullupload>10k 99.5 100 poweronreset v dd_por voltageonv dd 1.5 3.8 v overvoltagedetection v dd_ovd voltageonv dd 6.5 8.5 v table 3: electrical specifications ? the ratiometric output voltage is proportional to the supply voltage. when using the supply voltage a s a reference for an a/d converter, fluctuations of 10 % in supply voltage are compensated.
mlx90251 programmable linear hall effect sensor 3901090251 page 7 of 20 data sheet rev 012 oct/2012 7 programming range t a programming 20c to 30c. parameter symbol test conditions min typical max units outputquiescentvoltage v oq agnd=default agnd=01023 10 100 110 200 %v dd %v dd sensitivity s 2.6 210 mv/mt outputclampingvoltagelow clamplo 0 100 %v dd outputclampingvoltagehigh clamphi 0 100 %v dd temperaturecompensation tempco 1 st order 0 2300 ppm/c table 4: programming range specifications 8 timing specifications dc operating parameters at v dd = 5v (unless otherwise specified) and for t a as specified by the temperature range (e or l). parameter symbol test conditions min typical max units powerondelay t po filter=0,rg=0 filter=0,rg=15 filter=15,rg=0 filter=15,rg=15 0.4 0.6 1.1 5 0.8 1.2 2.2 10 ms ms ms ms stepresponsetime rg=0to3,filter=0 rg=4to7,filter=0 rg=8to11,filter=0 rg=12to15,filter=0 24 48 100 200 32 64 132 264 s s s s table 5: timing specifications 9 accuracy dc operating parameters at v dd = 5v (unless otherwise specified) and for t a as specified by the temperature range (e or l). parameter symbol ?? test conditions min typical max units thermalvoqdrift t v oq v oq =2.5v (1) , 25 c /150 c v oq =2.5v (1) ,25 c /40 c 0.2 0.4 +0.2 +0.4 % v dd %v dd lifetimedriftofthethermal voqdrift l t v oq 0.2 +0.2 % v dd lifetimevoqdrift l v oq 0.3 +0.3 % v dd lifetimesensitivitydrift l s 1 +1 % sensitivitytemperature coefficient ? tcs 0to500 ppm/ c 500to1200ppm/ c 1200to2300ppm/ c 100 150 200 ppm/ c ppm/ c ppm/ c thermaldriftofsen sitivity temperaturecompensation t tc va package gopackage 150 250 ppm/ c thermaldriftoutputclamping levels t v outclamp 0.4 +0.4 % v dd lifetimedriftoutputclamping levels l v outclamp 0.2 +0.2 % v dd linearityerror le 0.2 % table 6: accuracy specifications
mlx90251 programmable linear hall effect sensor 3901090251 page 8 of 20 data sheet rev 012 oct/2012 ? valid for rough gain within the specified option c ode. ?? ? l = life time drift (based on htol data [1000 hours @ 150c]). ? t = thermal drift. (1) for other test conditions, please contact the melex is sales representative of your area. 10 programmable features the mlx90251 has many programmable features for adj usting the output characteristic. the features are utilized by writing data into the redundant non-vol atile eeprom. below is a quick list and descriptio n of all the programmable parameters. many of the parameter s are set by melexis and they are not used by the e nd customer. later sections of the data sheet give de tails on how the parameters are used. parameter symbol description number of bits default internalbiaspoint agnd coarseadjustmentofv oq . 10 trimmed analogclockchoice ? ckanach adjustmentforamplifierclockgenerator. 2 preset clampinghigh clamphigh adjustmentofupperoutputclampingvoltage. 10 5 12 clampinglow clamplow adjustmentofloweroutputcl ampingvoltage. 10 512 customerid ?? custid openbitsforcustomersidprogramming. 2 4 preset offsetdrift ? drift v oq temperaturedriftcompensation. 4 trimmed eepromfaultlevel faultlev outputstateforeeprom parityerror. 1 0 finegain fg fineadjustmentforsensitivity. 10 0 filter filter adjustmentforlowpassoutputfilter . 4 0 invertslope invert sensitivitypolarityselection. 1 0 memorylock mem_lock usedtolocktheentireeeprom . 1 0 melexisid ? mlx_id melexisicidentificationnumber. preset melexislock ? mlx_lock usedtolockmelexisareaoftheeeprom. 1 0 outputdriver ? mode adjustmentforoutputstageamplifier. 2 1 offsetdac offset fineadjustmentofv oq . 10 0 oscillatoradjust ? oscadj chiposcillatorfrequencyadjustment. 4 pr eset eepromparity parity ensurestheintegrityofthee epromdata. 3 calculated roughgain rg roughadjustmentforsensitivity. 4 0 slow ? slow amplifierspeedadjustment. 1 preset temperature compensationwindow tcw rangeadjustmentforsensitivitytemperature compensation. 3 0 temperature compensation tc fineadjustmentofsensitivitytemperature compensation. 5 0 2ndordertemperature compensations tc 2 linearizationadjustmentofthesensitivity temperaturecompensation. 6 0 table 7: programmable parameters ? melexis parameter adjusted at final test. ?? not included in redundant area of the eeprom.
mlx90251 programmable linear hall effect sensor 3901090251 page 9 of 20 data sheet rev 012 oct/2012 10.1 output quiescent voltage (v oq ) two parameters, agnd and offset, are used for adjus tment of the v oq . the agnd is a 10 bit parameter for coarse adjustment of v oq . it has a resolution of approximately 0.014v and a range of -100%v dd to 200%v dd . the offset is a 10 bit parameter with a resoluti on of approximately -0.005v. the offset parameter is used for fine adjustment of the v oq , while the agnd parameter is used to set the range . the large adjustable range allows the mlx90251 to be us ed in an unipolar magnetic system without limiting the output voltage span. the formula below shows how t he agnd and offset parameters combine to set the v oq . v v oq dd offset v agnd v v v 00.5 1023 0.5 1023 25. 14 75.0 = ?? ? ?? ? ? ? + ?? ? ?? ? ? + ? = this formula approximates the typical v oq of the mlx90251. the actual v oq formula varies slightly from chip to chip. melexis calibrates the agnd setting durin g final test so that the v oq is approximately 50%v dd with offset set to 512. this gives the v oq a range of 0%v dd to 100%v dd without adjusting the agnd value. the offset parameter is often used to set the offse t in the application's output transfer characterist ic. 10.2 thermal v oq drift (drift) the thermal v oq drift is tuned using 4 bits. this parameter, drift , is calibrated for each unit by melexis during final test. the value is set to achieve a v oq accuracy below 10mv over a temperature span of 25 c to 150c. this parameter is not used by the end custo mer. 10.3 sensitivity, rough gain and fine gain the sensitivity of the mlx90251 is controlled throu gh parameters linked to dedicated internal amplific ation stages. the parameter rough gain (rg), or pre-ampli fier, has 4 bits for adjustment of two stages. the two msb affect the differential input differential outp ut (dido) stage. the two lsb effect the differenti al to single output (dts) stage. the gain of both the did o and dts are multiplied to get the total rg. the t able below shows the theoretical small signal amplifier gain vs. the parameter rg. the pre-amplifier is ch opper stabilized and the refresh frequency is adapted aut omatically to the rg setting to match the chopper g ain- bandwidth product. rough gain (msb lsb) dido dts gain 00 (00 00) 16 1.0 16 01 (00 01) 16 1.5 24 02 (00 10) 16 2.33 37 03 (00 11) 16 4.0 64 04 (01 00) 39 1.0 39 05 (01 01) 39 1.5 59 06 (01 10) 39 2.33 91 07 (01 11) 39 4.0 156 08 (10 00) 82 1.0 82 09 (10 01) 82 1.5 123 10 (10 10) 82 2.33 191 11 (10 11) 82 4.0 328 12 (11 00) 205 1.0 205 13 (11 01) 205 1.5 308 14 (11 10) 205 2.33 477 15 (11 11) 205 4.0 820 table 8: mlx90251 rough gain small signal amplifier gain
mlx90251 programmable linear hall effect sensor 3901090251 page 10 of 20 data sheet rev 012 oct/2012 the mlx90251 also has an additional stage, fine gai n, for fine tuning the sensitivity. the stage (par ameter fg) follows the rg and provides a 10 bit adjustment . the small signal gain of the fg is within 1.0 an d 2.5. the rg and fg parameters are adjusted in the applic ation to calibrate the device's sensitivity (gain) and output slope transfer characteristic. the function for the fine gain is given in the following equati on: 1023 * 6.0 1 1 fg gain fine ? = note. the one bit parameter invert is used to fix t he ?sign? of the sensitivity. a value of 0 makes t he sensitivity positive and the output voltage increas es in response to a south magnetic field. a value o f 1 makes the sensitivity negative and the output volta ge decreases in response to a south magnetic field. refer to section 10.5, sensitivity polarity, for mo re information on invert. 10.4 sensitivity range selection each unit is characterized over temperature during final test to optimize its performance and accuracy . to achieve the best possible sensitivity temperature c ompensation, tempco, each unit is optimized for use within a specific sensitivity range. this is repre sented in the ordering information by the option co de. there are four available ranges, option codes 0, 1, 2 and 3. the option code corresponds with the two msb o f the rg parameter. each device is tested to meet the te mpco specification in the sensitivity range determi ned by the rg parameter (rg = 0...3, rg = 4?7, rg = 8?1 1 or rg = 12?15), regardless of the fg parameter. option code rough gain sensitivity range (mv/mt) typical magnetic field range (mt, b max - b min ) xxx-000 0-3 (00 xx) 2.6 < s < 15 333 < b < 800 xxx-100 4-7 (01 xx) 10 < s < 35 156 < b < 333 xxx-200 8-11 (10 xx) 18 < s < 90 62 < b < 156 xxx-300 12-15 (11 xx) 50 < s < 210 6 < b < 62 table 9: optimized sensitivity range the next figures show the typical sensitivity versu s the fg and rg parameters. the gray areas are representative of the chip to chip dispersion (i.e. : for the same rg and fg parameters, the sensitivit y can vary from chip to chip). there is a large overlap b etween the different ranges for use of one range fo r applications with large magnetic and/or mechanical dispersions. the sensitivity graphs and tables can be used to select the right device type for the applic ation. if one is unsure of the applications magneti c design and the desired sensitivity range melexis recommend s option code 2.
mlx90251 programmable linear hall effect sensor 3901090251 page 11 of 20 data sheet rev 012 oct/2012 figures 10.4-1?10.4-4 sensitivity versus rg and fg
mlx90251 programmable linear hall effect sensor 3901090251 page 12 of 20 data sheet rev 012 oct/2012 10.5 sensitivity polarity (invert) the slope transfer characteristic defines the sensi tivity. the invert parameter changes the sensitivi ty's polarity, or the slope's direction. this allows th e device to accommodate the application requirement s and the magnet's polarity. the slope is inverted in the first stage of the ic, at the hall plate. with inv ert set to 0, the output voltage increases as a south magnetic fi eld is applied and decreases in the presence of a n orth magnetic field. an invert value of 1 causes the ou tput voltage to increase in the presence of a north magnetic field and decrease in the presence of a so uth magnetic field. the magnetic field polarity is referenced to the field component perpendicular to the top-face of the mlx90251. 10.6 clamping levels (clamplow, clamphigh) two independent values, called the clamping levels, can limit the output voltage range or swing. the clamplow parameter adjusts the minimum output volta ge level, clamplo. the clamphigh sets the maximum output voltage level, clamphi. both parame ters have 10 bits of adjustment with a resolution o f approximately 0.005v. the formulas below give a cl ose approximation of the output clamp voltage. the actual clamping level formulas vary slightly from c hip to chip. if clamplow exceeds clamphigh the output voltage is fixed at the high clamp voltage l evel. the clamphigh and clamplow have an initial value of 512, set by melexis. this results in a fi xed output voltage of approximately 50% v dd . v v v v dd dd clamphigh v clamphi clamplow v clamplo 00.5 00.5 1023 10.5 1023 10.5 = = ? = ? = at the point the output voltage switches between th e linear operating region and the clamping region t he output can deviate slightly. this is represented b y the grey areas in the figure below. the limits f or deviation in the y axis are listed in table 10. the deviatio n in the x axis is calculated from the application' s transfer function. the clamp comparator offset does not aff ect the output linearity or clamp voltage accuracy. during calibration it is recommended to set the cla mp voltage outside of the transition region (0v to 5v). field clamphigh clamplow vout linearoperating region transitionpoint figure 10.6 output voltage clamping deviation dc operating parameters at v dd = 5v (unless otherwise specified) and for t a as specified by the temperature range (e or l). parameter symbol test conditions min typical max units clampcomparatoroffset clamp off 0.7 +0.7 % v dd table 10: clamp comparator offset specification
mlx90251 programmable linear hall effect sensor 3901090251 page 13 of 20 data sheet rev 012 oct/2012 10.7 filter (filter) the mlx90251 includes two programmable low-pass fil ters located within the chopper amplifier stages. the two low-pass filters are controlled through a 4 bit parameter, filter. the filter value 0 corresponds to minimum filtering, maximum speed (impulse response time), and maximum output noise. the value 15 provides the maximum filtering, minimum speed, and minimum output noise. it is important to note the noise is also linked to the gain settings. the filter pa rameter needs to be adjusted to achieve optimal performance. the next table shows typical values t he cut-off frequency at -3 db versus filter and rg parameters. filter values from 8 to 11 are not use d. for most applications filter values 7 or 15 are recommended. cut-off frequency at -3 db (hz) ? typical filter mlx90251-0 rough gain 0?3 mlx90251-1 rough gain 4?7 mlx90251-2 rough gain 8?11 mlx90251-3 rough gain 12?15 0 22900 14300 7000 3850 1 19500 11450 5550 2950 2 12300 10000 3000 2300 3 10400 6750 2100 1100 4 7450 3900 1500 850 5 5850 2900 1125 860 6 5700 2700 1350 715 7 5050 2550 1380 650 8 not used 9 not used 10 not used 11 not used 12 2200 840 565 250 13 1000 480 470 190 14 920 380 290 155 15 800 330 250 135 table 11: cut-off frequency versus filter and rg pa rameters 10.8 sensitivity temperature compensation (tc, tcw, tc 2 ) the change in the device's sensitivity versus tempe rature is defined as the sensitivity temperature compensation, tempco. in an application the slope output transfer characteristic is often affected by temperature. fluctuations in temperature can cause variations in the air gap, mechanical alignment an d magnetic field. the sensitivity temperature compen sation feature compensates for these effects. three parameters, tc, tcw, tc 2 are used for adjustment of the tempco. the tcw is used to adjust the tempco range, tc is for fine adjustment of the temp co value, and tc 2 effects the tempco linear response. to simplify use of these parameters melexis stores a look up table within the eeprom of each device. the look up table is optimized for each device by chara cterizing the unit over temperature at final test. the value of tempco is often determined by the magn et. in the application the tempco is adjusted to compensate for the temperature coefficient of the m agnet. to adjust the value the look up table is re ad from the device. the parameters are then calculated to match the desired value. the melexis ptc hardware and software tools contain built in functions for progr amming the tempco.
mlx90251 programmable linear hall effect sensor 3901090251 page 14 of 20 data sheet rev 012 oct/2012 tempco range (ppm / c) accuracy (ppm / c) 0 to 500 100 500 to 1200 150 1200 to 2000 200 table 12: tempco accuracy note: the budget error of the whole system, the com pensation mismatch (system vs. ic) tolerance should be taken into consideration during the design. table 1 1 is valid for rough gain within the specified opti on code. see section 10.4 for information on selecting the o ption code. 10.9 diagnostic output level (faultlev) the mlx90251 eeprom memory content is secured throu gh a parity check. this self-diagnostic feature brings the output to a defined range in case of a p arity error. the parameter, faultlev, is used to d efine the parity error diagnostic state. with the faultl ev set to 0 a parity error event will result in an output diagnostic voltage low. with the faultlev set to 1 a parity error event will result in an output diag nostic voltage high. to get rid of the output load influe nce the output diagnostic voltage level can be fixe d to either ground (to be used with pull-down load) or v dd (to be used with pull-up load). melexis ptc softw are and hardware tools have built in functions for calculat ing and programming the parity. note: the mlx90251 eeprom is also redundant. each param eter bit is written in three separate cells and a ?majority voting? is applied to determine its statu s. a parity error is detected only if two out of t he three cells unexpectedly change state. the bits available for the customer id are not redundant. 10.10 the eeprom, parity, and melexis crc the memory cells of the eeprom are arranged in a ta ble of four columns and one hundred twenty eight rows. this configuration gives redundancy to the p arameters stored in the eeprom. each parameter bit is written in three separate cells in an individual ro w. a majority voting applied to the three cells de termines the logic status of the bit. a parameter bit only toggles state in error if two out of three memory cells, within a row, unexpected ly change. if this happens the feature, parity, force s the output voltage to the faultlev diagnostic lev el. this ensures the device does not operate with a cri tical memory fault. the remaining memory cells are used for data storag e. the status of these cells does not effect the d evice operation. for example the customer id, custid, is stored in this area. melexis stores the device id information, tempco look-up table and crc bits in t he extra cells. the crc bits ensure the integrity of the melexis data. note: to avoid parity and crc errors, the entire c ontents of the eeprom must be read before programming. melexis ptc software and hardware too ls have built in functions for reading the eeprom a nd handling parity. 10.11 output amplifier configuration (mode) the output buffer can be configured to accommodate capacitive loads and improve the saturation voltage (output swing). the two bit parameter, mode, sets the current capacity of the output amplifier. mele xis sets this parameter to 1 at final test. this parameter is not used by the end customer. 10.12 memory lock (memlock) the memory lock feature prevents the device from en tering programming mode and from any changes to the
mlx90251 programmable linear hall effect sensor 3901090251 page 15 of 20 data sheet rev 012 oct/2012 eeprom. the entire eeprom is locked by setting the memlock parameter to 1. this should be the last parameter set in the application. 10.13 ic traceability a unique id number is programmed into the eeprom of every ic. the id number gives m elexis additional traceability to better service its customers. the id number is composed of the lot number, wafer numb er, and wafer coordinates (x and y). memory is also availa ble for the customer to add a serial number of the product or any other data. 11 performance graphs figure 11-1?11-2 i dd versus v dd -10 0 10 20 30 -80 -60 -40 -20 0 20 40 60 typical i dd vs v dd v dd (volts) i dd (ma) 4 4.5 5 5.5 6 4.5 5 5.5 6 6.5 7 7.5 8 8.5 typical i dd vs v ddnom v dd (volts) i dd (ma) 150 c -40 c 25 c 150 c -40 c 25 c v ddnom over voltage under voltage
mlx90251 programmable linear hall effect sensor 3901090251 page 16 of 20 data sheet rev 012 oct/2012 12 applications information 12.1 application circuits ? va-package pin 2, test, is not used in applications. for emc protection it is recommended to connect pin 2 to pi n 3, ground, as close as possible to the device pins. t he values for capacitors, c1 and c2, can be adjuste d to satisfy esd and emc requirements according to the e nvironment. ceramic capacitors are recommended for use in the application. however for stable operatio n, the global output capacitor (c2 + c3) should not be higher than 150nf.if higher capacitors (due to spec ial esd or emc requirements) or special circuit configurations are requested, please contact melexi s. the mlx90251 can operate with a high impedance load and c2, a load resistor is not required. figures 12.1-1?12.1-2 application circuits a voltage of 9v is required on v dd for programming. all additional components connec ted to v dd must be able to withstand the voltage. the mlx90251 is desi gned for operation with a stable 5v supply. if fas t voltage transients occur additional filtering may b e required. 12.2 programming the sensor to program the mlx90251 connection to v dd , gnd, and v out is required. the device is placed into program mode by increasing the supply voltage to the v dd program level. in program mode data is clocked in to the device through the output pin using the melexis tri -level ptc protocol. the clock and data are integr ated into one serial data stream, eliminating the need for a dedicated clock signal. the data is clocked at the leading edge of each bit. figure 12.2-1 v dd programming level figure 12.2-2 tri-level ptc 0v 2.5v 5.0v device decoded clock device decoded data 0 1 x x x v out programwaveform
mlx90251 programmable linear hall effect sensor 3901090251 page 17 of 20 data sheet rev 012 oct/2012 note: external capacitors and resistors will effect the rise and fall times for the programming wavefo rms. program pulse timings may require adjustment for th e application. the device can not be programmed if memlock equals 1. the eeprom contents can be read from the device. t his procedure, known as a read back, is done by sending a read command and then measuring the suppl y current. to successfully read the eeprom it must be possible to measure the supply current to the de vice. the melexis ptc hardware and software tools contain built in functions for reading the eeprom. the mlx90251 can be programmed by using the ptc-04 programmer and the dedicated software tools. the timing and voltage levels are controlled through th e programming hardware and software. further detai ls can be found in the mlx90251 software documentation. 12.3 calibration procedure the programmable features of the device allow for c alibration within the application. this section gi ves general information for a two point calibration pro cedure. the two point calibration is the most comm on however, it is possible to adapt other procedures. 1.) the first step in the calibration procedure is to initialize the device. this is done by establis hing communication and reading the contents of the eepro m. 2.)the second step is to set the tempco and filter settings. 3.) step three is the evaluation of position one. during this step the output voltage is measured wit h initial values for rg, fg and offset. 4.) step four is the evaluation of position two. d uring this step, the output voltage is measured wit h the same values from step 3. from the measurements it is po ssible to calculate the slope and offset error. ne xt the output slope transfer characteristic versus fg and rg is interpolated. with this information the init ial settings are adjusted and the output voltage is measured aga in. 5.) step five is the final check and adjustment. a t this stage small corrections are made to the offs et and fg parameters. next, the output clamping parameter s, clamphigh and clamplow, are determined. 6.) the sixth step is the program phase. now that all the parameters are determined and the applicati on requirements are satisfied, the settings are progra mmed into the eeprom. 7.) the final step, seven, is the lock and verify s tep. here the customer can perform any number of a dditional measurements and verify the eeprom contents. after this is completed the memlock is set and the eeprom is locked, preventing any further programmin g. note: eeprom verification is done by reading the co ntents of the eeprom and comparing it to the data written. it is possible to read the eeprom content s regardless of the status of memlock. the melexis ptc software tools contain built in fun ctions and procedures for calibrating the mlx90251. please refer to the software documentation for more information on how to use the calibration tools. the output of the mlx90251 is ratiometric. to avoi d calibration errors from fluctuations in the suppl y voltage, the output voltage should be measured as a percenta ge of the supply voltage.
mlx90251 programmable linear hall effect sensor 3901090251 page 18 of 20 data sheet rev 012 oct/2012 13 standard information regarding manufacturabilit y of melexis products with different soldering processes our products are classified and qualified regarding soldering technology, solderability and moisture s ensitivity level according to following test methods: reflow soldering smd?s (s urface m ount d evices) ? ipc/jedec j-std-020 moisture/reflow sensitivity classification for nonh ermetic solid state surface mount devices (classification reflow profiles according to table 5-2) ? eia/jedec jesd22-a113 preconditioning of nonhermetic surface mount device s prior to reliability testing (reflow profiles according to table 2) wave soldering smd?s (s urface m ount d evices) and thd?s (t hrough h ole d evices) ? en60749-20 resistance of plastic- encapsulated smd?s to combin ed effect of moisture and soldering heat ? eia/jedec jesd22-b106 and en60749-15 resistance to soldering temperature for through-hol e mounted devices iron soldering thd?s (t hrough h ole d evices) ? en60749-15 resistance to soldering temperature for through-hol e mounted devices solderability smd?s (s urface m ount d evices) and thd?s (t hrough h ole d evices) ? eia/jedec jesd22-b102 and en60749-21 solderability for all soldering technologies deviating from above mentioned standard conditions (regarding peak temperature, temperature gradient, temperature prof ile etc) additional classification and qualificatio n tests have to be agreed upon with melexis. the application of wave soldering for smd?s is allo wed only after consulting melexis regarding assuran ce of adhesive strength between device and board. melexis recommends reviewing on our web site the ge neral guidelines soldering recommendation ( http://www.melexis.com/quality_soldering.aspx ) as well as trim&form recommendations (http://www.melexis.com/assets/trim-and-form-recomm endations-5565.aspx). 14 esd precautions electronic semiconductor products are sensitive to electro static discharge (esd). always observe electro static discharge control pro cedures whenever handling semiconductor products.
mlx90251 programmable linear hall effect sensor 3901090251 page 19 of 20 data sheet rev 012 oct/2012 15 package information va-package: the lead-free va-package is released f or msl1/245c. 15.1 va package outline and hall plate position
mlx90251 programmable linear hall effect sensor 3901090251 page 20 of 20 data sheet rev 012 oct/2012 16 disclaimer devices sold by melexis are covered by the warranty and patent indemnification provisions appearing in its term of sale. melexis makes no warranty, express, s tatutory, implied, or by description regarding the information set forth herein or regarding the freed om of the described devices from patent infringemen t. melexis reserves the right to change specifications and prices at any time and without notice. therefo re, prior to designing this product into a system, it is nece ssary to check with melexis for current information . this product is intended for use in normal commercial ap plications. applications requiring extended tempera ture range, unusual environmental requirements, or high reliability applications, such as military, medical life- support or life-sustaining equipment are specifical ly not recommended without additional processing by melexis for each application. the information furnished by melexis is believed to be correct and accurate. however, melexis shall no t be liable to recipient or any third party for any dama ges, including but not limited to personal injury, property damage, loss of profits, loss of use, interrupt of business or indirect, special incidental or consequ ential damages, of any kind, in connection with or arising out of the furnishing, performance or use of the t echnical data herein. no obligation or liability to recipien t or any third party shall arise or flow out of mel exis? rendering of technical or other services. ? 2012 melexis nv. all rights reserved. for the latest version of this document, go to our website at www.melexis.com or for additional information contact melexis direc t: europe, africa, asia: america: phone: +32 1367 0495 phone: +1 248 306 5400 e-mail: sales_europe@melexis.com e-mail: sales_usa @melexis.com iso/ts 16949 and iso14001 certified

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